Carbon-nanotube-based single-electron/hole transistors

Hong Li, Qing Zhang*, Jingqi Li

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    28 Scopus citations

    Abstract

    Single-walled-carbon-nanotube (SWNT)-based single-electron/hole devices are fabricated with long SWNT channel surrounded by several short SWNTs on the electrodes. The channel current of the device is suggested to be controlled by the Schottky barriers, which are very sensitive to the electrostatic potential at the SWNT/electrode contacts. Coulomb blockade phenomena in the channel current below 70 K suggest two-fold effects caused by single electron/hole charging the short SWNTs: (1) The charged short SWNTs have a significant characteristic of Coulomb blockade, and (2) the electrostatic potential of charged short SWNTs modify the Schottky barrier, and hence the channel current.

    Original languageEnglish (US)
    Article number013508
    JournalApplied Physics Letters
    Volume88
    Issue number1
    DOIs
    StatePublished - Apr 10 2006

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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