Calcium as a nonradiative recombination center in InGaN

Jimmy-Xuan Shen, Darshana Wickramaratne, Cyrus E. Dreyer, Audrius Alkauskas, Erin Young, James S. Speck, Chris G. Van de Walle

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level ~1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017 cm−3, the Shockley–Read–Hall recombination coefficient, A, of InGaN exceeds 106 s−1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes.
Original languageEnglish (US)
Pages (from-to)021001
JournalApplied Physics Express
Volume10
Issue number2
DOIs
StatePublished - Jan 13 2017
Externally publishedYes

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