Bulk Spin Torque-Driven Perpendicular Magnetization Switching in L10 FePt Single Layer.

Meng Tang, Ka Shen, Shijie Xu, Huanglin Yang, Shuai Hu, Weiming Lü, Changjian Li, Mengsha Li, Zhe Yuan, Stephen J Pennycook, Ke Xia, Aurelien Manchon, Shiming Zhou, Xuepeng Qiu

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Due to its inherent superior perpendicular magnetocrystalline anisotropy, the FePt in L10 phase enables magnetic storage and memory devices with ultrahigh capacity. However, reversing the FePt magnetic state, and therefore encoding information, has proven to be extremely difficult. Here, it is demonstrated that an electric current can exert a large spin torque on an L10 FePt magnet, ultimately leading to reversible magnetization switching. The spin torque monotonically increases with increasing FePt thickness, exhibiting a bulk characteristic. Meanwhile, the spin torque effective fields and switching efficiency increase as the FePt approaches higher chemical ordering with stronger spin-orbit coupling. The symmetry breaking that generates spin torque within L10 FePt is shown to arise from an inherent structural gradient along the film normal direction. By artificially reversing the structural gradient, an opposite spin torque effect in L10 FePt is demonstrated. At last, the role of the disorder gradient in generating a substantial torque in a single ferromagnet is supported by theoretical calculations. These results will push forward the frontier of material systems for generating spin torques and will have a transformative impact on magnetic storage and spin memory devices with simple architecture, ultrahigh density, and readily application.
Original languageEnglish (US)
Pages (from-to)2002607
JournalAdvanced materials (Deerfield Beach, Fla.)
DOIs
StatePublished - Jun 30 2020

Fingerprint Dive into the research topics of 'Bulk Spin Torque-Driven Perpendicular Magnetization Switching in L10 FePt Single Layer.'. Together they form a unique fingerprint.

Cite this