Broadband emission of GaAs/AlGaAs quantum-well superluminescent diode at 850 nm

C. E. Dimas*, C. T. Vishton, R. A. Merola, H. S. Djie, Boon Ooi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report the fabrication and characterization of broad emission linewidth GaAs/AlGaAs quantum-well based superluminescent diodes. A photon absorption section and an optical amplifier sections are monolithically integrated on the device to suppress feedback oscillation and to amplifier the optical power, respectively. The device emitters at 850 nm peak wavelength, and exhibits a broad bandwidth of 65 nm, output power > 3.5 mW, and a spectral ripple of 0.5 dB at 20°C under continuous wave operation.

Original languageEnglish (US)
Title of host publicationIntegrated Optics
Subtitle of host publicationDevices, Materials, and Technologies XI
DOIs
StatePublished - May 24 2007
EventIntegrated Optics: Devices, Materials, and Technologies XI - San Jose, CA, United States
Duration: Jan 22 2007Jan 24 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6475
ISSN (Print)0277-786X

Other

OtherIntegrated Optics: Devices, Materials, and Technologies XI
CountryUnited States
CitySan Jose, CA
Period01/22/0701/24/07

Keywords

  • GaAs/AlGaAs laser
  • Optical coherence tomography
  • Quantum-well
  • Superluminescent diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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