Broadband emission in InAs/InGaAlAs quantum-dash-in-well laser

Boon Ooi, Hery S. Djie, Amr S. Helmy, James C M Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the development of wide gain InAs/InGaAlAs/InP quantum-dash structure for broadband diode laser and amplifier. Characterizations of this material system have been performed using spectroscopy and microscopy techniques. Gain-guided broad area laser fabricated using this material system exhibits lasing wavelength coverage of up to 76 nm at ∼1.64 μm center wavelength from simultaneous multiple confined states lasing at room temperature.

Original languageEnglish (US)
Title of host publicationSemiconductor Photonics
Subtitle of host publicationNano-Structured Materials and Devices
PublisherTrans Tech Publications
Pages173-175
Number of pages3
ISBN (Print)0878494715, 9780878494712
DOIs
StatePublished - Jan 1 2008
EventInternational Conference on Materials for Advanced Technologies, ICMAT 2007 - , Singapore
Duration: Jul 1 2007Jul 6 2007

Publication series

NameAdvanced Materials Research
Volume31
ISSN (Print)1022-6680

Other

OtherInternational Conference on Materials for Advanced Technologies, ICMAT 2007
CountrySingapore
Period07/1/0707/6/07

Keywords

  • Broadband emission
  • Quantum dash
  • Quantum dot
  • Semiconductor laser

ASJC Scopus subject areas

  • Engineering(all)

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