Bound magnetic polarons induced ferromagnetism in transition-metal-doped oxide nanostructures

G. Z. Xing, J. B. Yi, D. D. Wang, L. Liao, T. Yu, Z. X. Shen, C. H.A. Huan, T. C. Sum, J. Ding, Tao Wu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

One dimensional (ID) oxide nanostructures such as nanowires (NWs) are strategically important for both basic science and technological applications. These emerging nanomaterials have demonstrated superb physical properties. In particular, nanowires of wide band gap semiconductors are promising as building blocks in optoelectronic and transparent electronics, and doping with transition metals can result in ferromagnetism. Here we report on the synthesis of ZnO, In2O3 nanostructures and their doped counterparts. Their physical properties have been measured systematically and they show great potential in electronic and spintronic applications.

Original languageEnglish (US)
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1120-1121
Number of pages2
DOIs
StatePublished - May 5 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: Jan 3 2010Jan 8 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period01/3/1001/8/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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