Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus, Chien Chia Chen, Ming Jui Lee, Hsueh Hsing Liu, Jen Inn Chyi, Michael R S Huang, Chuan Pu Liu, Tzu Chiao Wei, Jr-Hau He, Kun Yu Lai

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)4845-4850
Number of pages6
JournalAdvanced Materials
Volume27
Issue number33
DOIs
StatePublished - Jul 15 2015

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