Boron implanted, laser annealed p+ emitter for n-type interdigitated back-contact solar cells

Xinbo Yang*, Ralph Müller, Avi Shalav, Lujia Xu, Wensheng Liang, Rui Zhang, Qunyu Bi, Klaus Weber, Daniel Macdonald, Robert Elliman

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Ion implantation and laser processing technologies are very attractive for the fabrication of industrially feasible interdigitated back-contact (IBC) solar cells. In this work, p+ emitters were fabricated by boron implantation and laser annealing, and the electrical properties of emitters were investigated. An emitter sheet resistance (Rsh) in the range of 30-200 Ω/ could be achieved by varying the implanted dose. The saturation current density (Joe) of the passivated p+ emitter with Rsh of ∼ 125 Ω/ reached 95 fA/cm2, and the contact resistivity was determined to be as low as 5 × 10-6 Ω cm2. Such localized p+ emitters can be applied to ntype IBC solar cells, which could avoid the high temperature thermal annealing step and related problems.

Original languageEnglish (US)
Pages (from-to)320-325
Number of pages6
JournalEnergy Procedia
Volume55
DOIs
StatePublished - Jan 1 2014
Event4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014 - Hertogenbosch, Netherlands
Duration: Mar 25 2014Mar 27 2014

Keywords

  • Ion implantation
  • Laser annealing
  • N-type interdigitated back-contact solar cells
  • Silicon solar cells

ASJC Scopus subject areas

  • Energy(all)

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