Blue electroluminescence from znse p-n junction light-emitting diodes

Kazuhiro Ohkawa, Akira Ueno, Tsuneo Mitsuyu

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Pure blue-light emission has been obtained from homoepitaxial ZnSe p-n junction light-emitting diodes (LEDs). Homoepitaxy is made on ZnSe substrates dry-etched by a BC13 plasma. High-quality p-n junctions consists; of N-doped p-type ZnSe formed by active-nitrogen doping and Cl-doped «-type ZnSe using ZnCl2 as a dopant source. Current- voltage characteristics of the LEDs exhibited good rectification properties. The peak energy of blue electroluminescence from the LEDs was 2.67 eV with a narrow full width at half-maximum of 49 meV.

Original languageEnglish (US)
Pages (from-to)3873-3875
Number of pages3
JournalJapanese Journal of Applied Physics
Volume30
Issue number12
DOIs
StatePublished - 1991
Externally publishedYes

Keywords

  • Active nitrogen
  • Blue LED
  • Homoepitaxy
  • P-n junction
  • P-type
  • ZnSe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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