Blue electroluminescence from ZnSe p-n junction LEDs

Kazuhiro Ohkawa*, Akira Ueno, Tsuneo Mitsuyu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Fabrication of homoepitaxial ZnSe p-n junction LEDs has been succeeded for the first time. Molecular-beam epitaxial growth of the homoepitaxial p-n layers has been performed on a dry-etched ZnSe substrate. The p-n junction consists of a N-doped ZnSe layer formed by active nitrogen doping and a Cl-doped ZnSe layer. The homoepitaxial ZnSe p-n junction LEDs have emitted pure blue light at room temperature. The peak energy of the blue electroluminescence was 2.67 eV with a narrow full width at half maximum of 49 meV.

Original languageEnglish (US)
Title of host publicationConference on Solid State Devices and Materials
PublisherPubl by Business Cent for Acad Soc Japan
Pages704-706
Number of pages3
StatePublished - 1991
Externally publishedYes
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: Aug 27 1991Aug 29 1991

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period08/27/9108/29/91

ASJC Scopus subject areas

  • Engineering(all)

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