An apparatus, system, and method having a 3D pn-junction structure are presented. One embodiment of an apparatus includes a substrate, a first doped structure, and a second doped structure. In one embodiment, the first doped structure has a first doping type. The first doped structure may be formed above the substrate and extend outwardly from an upper surface of the substrate. In one embodiment, the second doped structure has a second doping type. The second doped structure may be formed above the substrate and in contact with the first doped structure. Additionally, the second doped structure may extend outwardly from the upper surface of the substrate.
|Original language||English (US)|
|Patent number||WO 2011092601 A2|
|State||Published - Aug 4 2011|