Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric

Felix Palumbo, Xianhu Liang, Bin Yuan, Yuanyuan Shi, Fei Hui, Marco A. Villena, Mario Lanza

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Multilayer hexagonal boron nitride (h-BN) is an insulating 2D material that shows good interaction with graphene and MoS2, and it is considered a very promising dielectric for future 2D-materials-based electronic devices. Previous studies analyzed the dielectric properties of thick (>10 nm) mechanically exfoliated h-BN nanoflakes (diameter < 20 μm) via conductive atomic force microscopy and applying very high voltages (>10 V); however, these methods are not scalable. In this work, the first device-level reliability study of large area h-BN dielectric stacks (grown via chemical vapor deposition) is presented, and the complete dielectric breakdown (BD) process is described. The experiments and calculations indicate that the BD process in metal/h-BN/metal devices starts with a progressive current increase across the h-BN stack until current densities up to 0.1 A cm−2 are reached. After that, the currents increase by sudden steps, which can be large (>1 order of magnitude, related to the BD of one/few h-BN layers) or small (
Original languageEnglish (US)
JournalAdvanced Electronic Materials
Volume4
Issue number3
DOIs
StatePublished - Mar 1 2018
Externally publishedYes

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