Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

Anoop S. Dhoot; Jonathan D. Yuen; Martin Heeney; Iain McCulloch; Daniel Moses; Alan J. Heeger

doi:10.1073/pnas.0605033103

Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

Anoop S. Dhoot, Jonathan D. Yuen, Martin Heeney, Iain McCulloch, Daniel Moses, Alan J. Heeger^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

150 Scopus citations

Abstract

We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen- 2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10¹⁵ cm^-2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 10⁶ A/cm², and high metallic conductivities, 10⁴ S/cm, in the FET channel; at 4.2 K, the current density is sustained at 10⁷ A/cm². Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm^2.V^-1·^s-1 at 297 K, comparable with that found in fully crystalline organic devices.

Original language	English (US)
Pages (from-to)	11834-11837
Number of pages	4
Journal	Proceedings of the National Academy of Sciences of the United States of America
Volume	103
Issue number	32
DOIs	https://doi.org/10.1073/pnas.0605033103
State	Published - Aug 8 2006
Externally published	Yes

Keywords

Conjugated polymer
Electronic transport

ASJC Scopus subject areas

General

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10.1073/pnas.0605033103

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title = "Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors",

abstract = "We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen- 2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (1015 cm-2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 106 A/cm2, and high metallic conductivities, 104 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 107 A/cm2. Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm2.V-1·s-1 at 297 K, comparable with that found in fully crystalline organic devices.",

keywords = "Conjugated polymer, Electronic transport",

author = "Dhoot, {Anoop S.} and Yuen, {Jonathan D.} and Martin Heeney and Iain McCulloch and Daniel Moses and Heeger, {Alan J.}",

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doi = "10.1073/pnas.0605033103",

language = "English (US)",

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journal = "Proceedings of the National Academy of Sciences of the United States of America",

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Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors. / Dhoot, Anoop S.; Yuen, Jonathan D.; Heeney, Martin; McCulloch, Iain; Moses, Daniel; Heeger, Alan J.

In: Proceedings of the National Academy of Sciences of the United States of America, Vol. 103, No. 32, 08.08.2006, p. 11834-11837.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

AU - Dhoot, Anoop S.

AU - Yuen, Jonathan D.

AU - Heeney, Martin

AU - McCulloch, Iain

AU - Moses, Daniel

AU - Heeger, Alan J.

PY - 2006/8/8

Y1 - 2006/8/8

N2 - We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen- 2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (1015 cm-2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 106 A/cm2, and high metallic conductivities, 104 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 107 A/cm2. Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm2.V-1·s-1 at 297 K, comparable with that found in fully crystalline organic devices.

AB - We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen- 2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (1015 cm-2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 106 A/cm2, and high metallic conductivities, 104 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 107 A/cm2. Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm2.V-1·s-1 at 297 K, comparable with that found in fully crystalline organic devices.

KW - Conjugated polymer

KW - Electronic transport

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U2 - 10.1073/pnas.0605033103

DO - 10.1073/pnas.0605033103

M3 - Article

C2 - 16873547

AN - SCOPUS:33747058498

VL - 103

SP - 11834

EP - 11837

JO - Proceedings of the National Academy of Sciences of the United States of America

JF - Proceedings of the National Academy of Sciences of the United States of America

SN - 0027-8424

IS - 32

ER -

Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

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Keywords

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