Benchmarking Silicon FinFET With the Carbon Nanotube and 2D-FETs for Advanced Node CMOS Logic Application

Uttam Kumar Das, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

Abstract

In this article, the performance of silicon FinFET is compared with carbon nanotube (CNT-FET) and 2-D field-effect transistors (2D-FETs) for the upcoming node CMOS logic application. Based on the experimental results, a 17-stage ring oscillator (RO) circuit is implemented using the compact models to analyze the stage-delay and energy-delay performances. A tightly positioned 20- and 10-nm channel-length-based CNT-FET enhances Ion and also increases the leakage currents significantly. Due to poor electrostatic control and increased gate leakage, the CNT-FET and 2D-FET provide lowered Ion and a limited ac performance. Thus, targeting an off-state current, the FinFET delivers more than three times higher drive current, as well as five times better energy-delay performances in comparison to the CNT-FET and 2D-FET. On the other hand, scaled organic FETs are yet far away to compare with FinFET technology. Hence, the silicon-based (3-D) FETs are leading in all the devices (2-D, 1-D, and 0-D) for scaling next-generation CMOS technology.
Original languageEnglish (US)
Pages (from-to)1-6
Number of pages6
JournalIEEE Transactions on Electron Devices
DOIs
StatePublished - 2021

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