Be-Doped ZnO thin-film transistors and circuits fabricated by spray pyrolysis in air

Stuart R. Thomas, George Adamopoulos, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We report the fabrication of zinc oxide (ZnO) thin-film transistors (TFTs) and simple integrated circuits by spray pyrolysis, and examine the role of beryllium (Be) as the chemical dopant. Doping is achieved through addition of Be-acetylacetonate into the parent Zn-acetate precursor solution followed by film deposition through spray pyrolysis. The microstructural properties of as-grown Be-ZnO films with different dopant concentrations are investigated using a combination of atomic force microscopy and X-ray diffraction techniques, which show the formation of polycrystalline films. Introduction of Be is found to impact the degree of crystallinity of ZnO films where a dramatic decrease in the average grain size is observed with increasing Be concentration. To assess the effects of Be-doping on the electrical properties of ZnO films we have fabricated Be-ZnO based TFTs using different doping concentrations. The average electron mobility calculated from these transistors is on the order of∼ 2cm2· V-1·s-1 with the threshold voltage (VTH) exhibiting a strong dependence on Be concentration. The ability to control VTH through the introduction of Be has been exploited for the fabrication of unipolar inverters with symmetric trip-voltages and good noise margins.

Original languageEnglish (US)
Article number6353597
Pages (from-to)688-693
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume9
Issue number9
DOIs
StatePublished - 2013
Externally publishedYes

Keywords

  • High electron mobility
  • thin-film transistors (TFTs)
  • threshold voltage (V) control
  • zinc oxide (ZnO)
  • ZnO circuits

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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