Bandgap engineering of InAs/InGaAlAs quantum dashes-in-well laser structures: A surface photovoltage spectroscopy study

Ts Ivanov, V. Donchev, K. Bachev, Y. H. Ding, Y. Wang, H. S. Djie, Boon Ooi

Research output: Contribution to journalArticlepeer-review

Abstract

Room temperature surface photovoltage (SPV) spectroscopy is used to study the interband optical transitions and intermixing processes in InAs quantum-dash-in-InAlGaAs quantum-well structures grown on InP substrates. The intermixing is performed by nitrogen ion implantation followed by rapid thermal annealing at 700°C in nitrogen ambient. The effect of group-III intermixing to the interband optical transition energies in the structures is revealed by SPV spectroscopy and the results are confirmed by photoluminescence measurements. A differential bandgap blueshift as large as 93 meV (176 nm) is observed in the intermixed sample compared to the as grown one. The SPV investigation confirms that this intermixing technique is a powerful tool for achieving the required wavelength of 1.55 μm for telecommunication applications.

Original languageEnglish (US)
Article number012033
JournalJournal of Physics: Conference Series
Volume113
Issue number1
DOIs
StatePublished - May 1 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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