bandgap-engineered broadband stimulated emission in semiconductor quantum dash interband laser

C. L. Tan, H. S. Djie, C. E. Dimas, V. Hongpingyo, Y. H. Ding, Boon Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Authors demonstrate the generation of broadband stimulated emission in the postgrowth wavelength tuned InAs/InAlGaAs quantum-dash (Qdash) laser grown on InP substrate. The laser exhibits room temperature lasing wavelength coverage of up to 50 nm at center wavelength of ∼1.57 μm. Despite the bandgap blue-shift of ∼70 nm after Qdash intermixing process, the laser exhibits a broadband signature of lasing linewidth, which is comparable to the asgrown laser. The integrity of the material is retained after intermixing, suggesting its potential application in the fabrication of monolitically-integrated ultra-broadband semiconductor Qdash laser.

Original languageEnglish (US)
Title of host publication2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 - Singapore, Singapore
Duration: Dec 8 2008Dec 11 2008

Publication series

Name2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Other

Other2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
CountrySingapore
CitySingapore
Period12/8/0812/11/08

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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