Band structure calculation of dilute-As GaNAs by first principle

Xiaohang Li*, Hua Tong, Hongping Zhao, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We present the band structure calculation of dilute-As GaNAs alloys (from 0% to 6.25% As) by employing the densityfunctional theory that adopts the local density approximation. Our studies indicate that the GaNAs shows a direct bandgap property. A small incorporation of As into the GaN alloy leads to the a significant decrease in the energy gap, which allows direct band gap transition covering from 3.47 eV (0% As) down to 1.93eV (6.25% As). The finding implies the dilute-As GaNAs alloy as an excellent candidate for the active material for optoelectronics that covers the entire visible spectral regime. The carrier effective masses of dilute-As GaNAs alloys are also presented.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XVIII
DOIs
StatePublished - Jun 15 2010
EventPhysics and Simulation of Optoelectronic Devices XVIII - San Francisco, CA, United States
Duration: Jan 25 2010Jan 28 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7597
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XVIII
CountryUnited States
CitySan Francisco, CA
Period01/25/1001/28/10

Keywords

  • Dilute-As GaNAs
  • Effective mass
  • First principle
  • Visible spectrum

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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