Band gap tunning in BN-doped graphene systems with high carrier mobility

Thaneshwor P. Kaloni, R. P. Joshi, N. P. Adhikari, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.
Original languageEnglish (US)
Pages (from-to)073116
JournalApplied Physics Letters
Volume104
Issue number7
DOIs
StatePublished - Feb 17 2014

Fingerprint

Dive into the research topics of 'Band gap tunning in BN-doped graphene systems with high carrier mobility'. Together they form a unique fingerprint.

Cite this