Band gap expansion, shear inversion phase change behaviour and low-voltage induced crystal oscillation in low-dimensional tin selenide crystals

Robin Carter, Mikhail Suetin, Samantha Lister, M. Adam Dyson, Harrison Trewhitt, Sanam Goel, Zheng Liu, Kazu Suenaga, Cristina Giusca, Reza J. Kashtiban, John L. Hutchison, John C. Dore, Gavin R. Bell, Elena Bichoutskaia*, Jeremy Sloan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

In common with rocksalt-type alkali halide phases and also semiconductors such as GeTe and SnTe, SnSe forms all-surface two atom-thick low dimensional crystals when encapsulated within single walled nanotubes (SWNTs) with diameters below ∼1.4 nm. Whereas previous density functional theory (DFT) studies indicate that optimised low-dimensional trigonal HgTe changes from a semi-metal to a semi-conductor, low-dimensional SnSe crystals typically undergo band-gap expansion. In slightly wider diameter SWNTs (∼1.4-1.6 nm), we observe that three atom thick low dimensional SnSe crystals undergo a previously unobserved form of a shear inversion phase change resulting in two discrete strain states in a section of curved nanotube. Under low-voltage (i.e. 80-100 kV) imaging conditions in a transmission electron microscope, encapsulated SnSe crystals undergo longitudinal and rotational oscillations, possibly as a result of the increase in the inelastic scattering cross-section of the sample at those voltages. This journal is

Original languageEnglish (US)
Pages (from-to)7391-7399
Number of pages9
JournalDalton Transactions
Volume43
Issue number20
DOIs
StatePublished - May 28 2014

ASJC Scopus subject areas

  • Inorganic Chemistry

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