Band-edge energies and photoelectrochemical properties of n-type Al xGa1-xN and InyGa1-yN alloys

Katsushi Fujii*, Masato Ono, Takashi Ito, Yasuhiro Iwaki, Akira Hirako, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

We studied photoelectrochemical properties of Alx Ga1-x N for the first time, and compared with those of Iny Ga1-y N. The conduction band-edge energy of n-type Alx Ga1-x N decreased with Al composition, however the valence band-edge energy did not significantly change. Saturated photocurrent obtained from dynamic photocurrent-voltage measurements under illumination also decreased with increasing Al composition. Greater Al composition also shifted the onset voltage to more negative direction. These phenomena can be explained by the changes of bandgap and band-edge energies with Al composition.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume154
Issue number2
DOIs
StatePublished - Jan 19 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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