Band-edge effective work functions by controlling HfO 2 /TiN interfacial composition for gate-last CMOS

C. L. Hinkle*, R. V. Galatage, R. A. Chapman, E. M. Vogel, Husam Niman Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. J. Chambers, J. B. Shaw

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Fingerprint

Dive into the research topics of 'Band-edge effective work functions by controlling HfO <sub>2</sub> /TiN interfacial composition for gate-last CMOS'. Together they form a unique fingerprint.

Engineering & Materials Science