Band-edge effective work functions by controlling HfO 2 /TiN interfacial composition for gate-last CMOS

C. L. Hinkle*, R. V. Galatage, R. A. Chapman, E. M. Vogel, Husam Niman Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. J. Chambers, J. B. Shaw

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Effective work function (EWF) changes of TiN/HfO 2 annealed at low temperatures in different ambient environments are correlated to the atomic concentration of oxygen, nitrogen, and aluminum at the metal/dielectric interface. Low EWFs (4.0 eV) are obtained by allowing aluminum to migrate to the TiN/HfO 2 interface during a forming gas anneal. High EWFs (5.1 eV) are achieved with anneals that incorporate oxygen throughout the TiN with [O] = 2.8×10 21 cm -3 near the TiN/HfO 2 interface. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO 2 interface cause the formation of dipoles that increase the EWF.

Original languageEnglish (US)
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications
Pages285-295
Number of pages11
Edition2
DOIs
StatePublished - Aug 1 2011
EventSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting - Montreal, QC, Canada
Duration: May 2 2011May 4 2011

Publication series

NameECS Transactions
Number2
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period05/2/1105/4/11

ASJC Scopus subject areas

  • Engineering(all)

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