Auger-type hole trapping process at green emission centers of ZnO Nanowires

Tze Chien Sum, Mingjie Li, Guichuan Xing, Tom Wu, Guozhong Xing

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The origins of the green emission (GE) from ZnO nanostructures remain highly controversial despite extensive studies. Herein, transient absorption spectroscopy (TAS) revealed a small Stokes shift of ∼180 meV between the GE-centers (located at ∼0.7 eV above the valence band) and the GE peak - yielding the first experimental evidence of the GE originating from charge transitions of the ZnO di-vacancies proposed recently in density functional calculations. TAS also uncovered an ultrafast Auger-type hole-trapping process to VZnO that occurs in a sub-ps timescale.

Original languageEnglish (US)
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
DOIs
StatePublished - Jan 1 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUnited States
CitySan Jose, CA
Period06/9/1306/14/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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