Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

Ramy M. Qaisi, Casey Smith, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)621-624
Number of pages4
Journalphysica status solidi (RRL) - Rapid Research Letters
Volume8
Issue number7
DOIs
StatePublished - May 15 2014

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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