Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

Arthur Useinov, Chinthaka Pasan Gooneratne, Jürgen Kosel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.
Original languageEnglish (US)
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications
Pages145-148
Number of pages4
ISBN (Print)9783037854365
DOIs
StatePublished - Jun 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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