Application of x-ray metrology in the characterization of metal gate thin films

P. Y. Hung*, Husam Niman Alshareef, Tamzin Lafford, D. Keith Bowen, Prashant Majhi, Alain Diebold

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Physical characterization of as-deposited and 1000 °C annealed Ta xAl 1-xN thin films was performed using several characterization techniques. X-ray diffraction metrology shows that the crystallographic phase and crystallinity of TaN and AlN films vary with composition. The unannealed TaN film was cubic TaN, while the annealed TaN was mixed hexagonal Ta 2N and hexagonal TaN. Both AlN films were hexagonal, with the annealed film having a higher crystalline fraction. However, Ta xAl 1-xN films displayed a relatively small change in crystalline fraction and crystallography. Well behaved capacitors were fabricated, and a work function of ∼5.0 eV was obtained.

Original languageEnglish (US)
Pages (from-to)2437-2441
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number5
DOIs
StatePublished - Oct 9 2006

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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