Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy

Tien Khee Ng*, Soon Fatt Yoon, Wan Khai Loke, Satrio Wicaksono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The photoluminescence (PL) mechanisms of as-grown GaInNAs/GaAs quantum well were investigated by temperature-dependent PL measurements. An anomalous two-segmented trend in the PL peak energy vs. temperature curve was observed, which has higher and lower temperature-dependent characteristics at low temperature (∼5-∼80 K) and high temperature (above ∼80 K), respectively. The low and high-temperature segments were fitted with two separate Varshni fitting curves, namely Fit_low and Fit_high, respectively, as the low-temperature PL mechanism is dominated by localized PL transitions while the high-temperature PL mechanism is dominated by the e1-hh1 PL transition. Further investigation of the PL efficiency vs. 1/kT relationship suggests that the main localized state is located at ∼34 meV below the e1 state. It is also found that the temperature (∼80 K) at which the PL full-width at half-maximum changes from linear trend to almost constant trend correlates well with the temperature at which the PL peak energy vs. temperature curve changes from Fit_low to Fit_high.

Original languageEnglish (US)
Pages (from-to)351-358
Number of pages8
JournalJournal of Crystal Growth
Volume270
Issue number3-4
DOIs
StatePublished - Oct 1 2004

Keywords

  • A1. Atomic force microscopy
  • A1. Optical microscopy
  • A3. Molecular beam epitaxy
  • A3. Quantum wells
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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