Anomalous Hall effect in polycrystalline Ni films

Zaibing Guo, Wenbo Mi, Qiang Zhang, Bei Zhang, Razan Aboljadayel, Xixiang Zhang

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.
Original languageEnglish (US)
Pages (from-to)220-224
Number of pages5
JournalSolid State Communications
Volume152
Issue number3
DOIs
StatePublished - Feb 2012

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemistry(all)
  • Condensed Matter Physics

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