Analysis of TMGa/NH 3/H 2 reaction system in GaN-MOVPE growth by computational simulation

A. Hirako*, S. Koiso, K. Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report the major growth pathways of GaN metalorganic vapor-phase epitaxial growth from a TMGa/NH 3/H 2 system studied by computational simulation. It has been found that the most major growth pathway is stepwise elimination of CH 4 from TMGa:NH 3 adducts (TMGa:NH 3 → DMGaNH 2 → MMGaNH → Ga-N → Growth), and the second major growth pathway is due to GaNH 2 molecules sublimated from GaN layer. [Ga-N] n was generated by polymerization of Ga-N molecules around the susceptor heated. GaN layer was deposited on not only the substrate but also the heated reactor walls.

Original languageEnglish (US)
Pages (from-to)1716-1719
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume203
Issue number7
DOIs
StatePublished - May 2006
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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