We report the major growth pathways of GaN metalorganic vapor-phase epitaxial growth from a TMGa/NH 3/H 2 system studied by computational simulation. It has been found that the most major growth pathway is stepwise elimination of CH 4 from TMGa:NH 3 adducts (TMGa:NH 3 → DMGaNH 2 → MMGaNH → Ga-N → Growth), and the second major growth pathway is due to GaNH 2 molecules sublimated from GaN layer. [Ga-N] n was generated by polymerization of Ga-N molecules around the susceptor heated. GaN layer was deposited on not only the substrate but also the heated reactor walls.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|State||Published - May 2006|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials