Analysis of the oxidation kinetics and barrier layer properties of ZrN and Pt/Ru thin films for DRAM applications

Husam Niman Alshareef*, X. Chen, D. J. Lichtenwalner, A. I. Kingon

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

ZrN and Pt/Ru thin films have been grown by an automated ion beam sputter-deposition system. Both materials were evaluated for use as barrier layers (ZrN) and bottom electrodes (Pt/Ru) in dynamic random access memory (DRAM) applications. The ZrN films had resistivities on the order of 250-300 μΩ cm. The ZrN films were (002) oriented and were rather smooth with an average surface roughness of ± 17 Å. Analysis of the oxidation kinetics of the ZrN thin films reveals a thermally activated, diffusion-limited oxidation process with an activation energy of 2.5 eV in the temperature range of 500-650 °C. This implies that there is an advantage in using ZrN as a barrier layer instead of TiN since the activation energy for oxidation of TiN is 2.05 eV. In addition, preliminary data suggest that a Pt/Ru double layer may be a promising bottom electrode and oxygen diffusion barrier for use in DRAMs with high-permittivity dielectrics.

Original languageEnglish (US)
Pages (from-to)265-270
Number of pages6
JournalThin Solid Films
Volume280
Issue number1-2
DOIs
StatePublished - Jan 1 1996

Keywords

  • Metallization
  • Oxidation
  • Reaction kinetics
  • Sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Analysis of the oxidation kinetics and barrier layer properties of ZrN and Pt/Ru thin films for DRAM applications'. Together they form a unique fingerprint.

Cite this