Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

Hongping Zhao*, Guangyu Liu, Nelson Tansu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

167 Scopus citations

Abstract

The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap (e-hh) and spontaneous emission rate. The analysis was carried out by using self-consistent six-band kp band formalism. The design of active region consisting of 30 Å In0.25 Ga0.75 N QW with InN delta-layer leads to large e-hh of >50% with emission wavelength in the yellow and red spectral regimes, which is applicable for nitride-based light-emitting diodes.

Original languageEnglish (US)
Article number131114
JournalApplied Physics Letters
Volume97
Issue number13
DOIs
StatePublished - Sep 27 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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