This paper reports structural characterization on semipolar GaN films grown on r -plane sapphire substrates by metalorganic vapor-phase epitaxy. The polar orientation of semipolar GaN is assigned that the N -polar plane faces the surface side. The epitaxial relationship of the semipolar GaNr -plane sapphire is determined as [000 1-] GaN [1 2- 13]sapphire and [1 1- 00]GaN [1 1- 0 1-] sapphire. An anomalous phase orthogonal-twisted around the c -axis is revealed by transmission electron microscope, which is almost localized at the surface.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)