An orthogonal surface phase in semipolar GaNr -plane sapphire

Kazuhide Kusakabe, Daisuke Terui, Takashi Yamazaki, Iwao Hashimoto, Kazuhiro Ohkawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

This paper reports structural characterization on semipolar GaN films grown on r -plane sapphire substrates by metalorganic vapor-phase epitaxy. The polar orientation of semipolar GaN is assigned that the N -polar plane faces the surface side. The epitaxial relationship of the semipolar GaNr -plane sapphire is determined as [000 1-] GaN [1 2- 13]sapphire and [1 1- 00]GaN [1 1- 0 1-] sapphire. An anomalous phase orthogonal-twisted around the c -axis is revealed by transmission electron microscope, which is almost localized at the surface.

Original languageEnglish (US)
Article number171912
JournalApplied Physics Letters
Volume92
Issue number17
DOIs
StatePublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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