An electrical model for trap coupling effects on random telegraph noise

Thales Becker, Xuehua Li, Pedro Alves, Tao Wang, Kaichen Zhu, Yiping Xiao, Gilson Wirth, Mario Lanza

Research output: Contribution to journalArticlepeer-review

Abstract

Resistive switching (RS) devices are being studied exhaustively for multiple applications such as information storage and bio-inspired computing, but some reliability problems are still hindering their massive use. Among them, random telegraph noise (RTN) is one of the phenomena that still needs to be understood. In this work, we develop a general model to describe RTN in RS devices by demonstrating the existence of coupling effects between multiple traps, and their effect in the current amplitude deviation. We accurately describe anomalous RTN signals observed in high resistive state (HRS) and low-resistance state (LRS) of RS devices based on TiO2 and hexagonal boron nitride (h-BN).
Original languageEnglish (US)
Pages (from-to)1596-1599
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number10
DOIs
StatePublished - Oct 1 2020
Externally publishedYes

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