An efficient light-harvesting scheme using SiO 2 nanorods for InGaN multiple quantum well solar cells

C. H. Ho, G. J. Lin, P. H. Fu, C. A. Lin, P. C. Yang, I. Min Chan, K. Y. Lai, Jr-Hau He*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

SiO 2 nanorod arrays (NRAs) are fabricated on InGaN-based multiple quantum well (MQW) solar cells using self-assembled Ag nanoparticles as the etching mask and subsequent reactive ion etching. The SiO 2 NRAs effectively suppress the undesired surface reflections over the wavelengths from 330 to 570 nm, which is attributed to the light-trapping effect and the improved mismatch of refractive index at the air/MQW device interface. Under the air mass 1.5 global illumination, the conversion efficiency of the solar cell is enhanced by ∼21% largely due to increased short-circuit current from 0.71 to 0.76 mA/cm 2 . The enhanced device performances by the optical absorption improvement are supported by the simulation analysis as well.

Original languageEnglish (US)
Pages (from-to)194-198
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume103
DOIs
StatePublished - Aug 1 2012

Keywords

  • Antireflection
  • GaN
  • InGaN
  • Light harvesting
  • Nanorods

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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