An effective fabrication method for ultra thin aluminum structures

N. J. De Jager, W. J. Perold*, Ulrich Buttner

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper we discuss the various effects on resistivity of thin metal films, concluding that grain boundary scattering and the material's electron-mean-free-path are the dominant factors. We also present an effective procedure for the fabrication of patterned ultra thin aluminum (sub 100 nm thick) structures on thermally grown SiO 2 substrates, the results of which are compared to other commonly used electrode fabrication methods. A general 4-point probe measurement of an as-deposited 60 nm aluminum film's resistivity was performed. We also found our unique wet-etching method to deliver reproducible results with varying film thickness and yielding a favorable environment for the integration of nanomaterials.

Original languageEnglish (US)
Pages (from-to)1768-1770
Number of pages3
JournalThin Solid Films
Volume520
Issue number6
DOIs
StatePublished - Jan 1 2012

Keywords

  • Aluminum
  • Nanodevices
  • Thin films
  • Wet chemical etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'An effective fabrication method for ultra thin aluminum structures'. Together they form a unique fingerprint.

Cite this