Amorphous gallium oxide grown by low-temperature PECVD

Eiji Kobayashi, Mathieu Boccard, Quentin Jeangros, Nathan Rodkey, Daniel Vresilovic, Aïcha Hessler-Wyser, Max Döbeli, Daniel Franta, Stefaan De Wolf, Monica Morales-Masis, Christophe Ballif

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaO:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
Original languageEnglish (US)
Pages (from-to)021518
JournalJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Issue number2
StatePublished - Mar 2 2018


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