Ambipolar field-effect transistors based on solution-processable blends of thieno[2,3-b]thiophene terthiophene polymer and methanofullerenes

Maxim Shkunov*, Richard Simms, Martin Heeney, Steve Tierney, Iain McCulloch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

89 Scopus citations

Abstract

The surface-engineering techniques which can facilitate balanced ambipolar transport with high charge-carrier mobility in a blend of a terthiophene polymer with methanofullerene solution-processed into thin-film FET structures, were analyzed. It is found that amine-terminated silane monolayer leads to enhanced electron transport and low hole transport, with a positive-carrier-accumulation onset voltage of about -16 V. CMOS-like inverters have been built on a single substrate using two identical transistors with a channel length of 10 μ m. The results show that ambipolar blends of theino-[2,3-b]thiophene terthiophene polymer and PCBM were processed into thin-film field-effect transistors showing n- and p-type conduction under different bias conditions.

Original languageEnglish (US)
Pages (from-to)2608-2612
Number of pages5
JournalAdvanced Materials
Volume17
Issue number21
DOIs
StatePublished - Nov 4 2005
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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