All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime

H. L. Gomes*, M. C.R. Medeiros, F. Villani, J. Canudo, F. Loffredo, R. Miscioscia, C. Martinez-Domingo, E. Ramon, E. Sowade, K. Y. Mitra, R. R. Baumann, Iain Mcculloch, J. Carrabina

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Abstract We report about the use of a printed pentafluorothiophenol layer on top of the dielectric surface as a passivation coating to improve the operational stability of all-ink-jet printed transistors. Transistors with bottom-gate structure were fabricated using cross-linked poly-4-vinylphenol (c-PVP) as dielectric layer and an ink formulation of an amorphous triarylamine polymer as semiconductor. The resulting TFTs had low turn-on voltage (Vth < |5 V|) and a mobility ≈0.1 cm2/(V s). A comparison of identically fabricated transistors shows that devices with coated dielectric have a higher operational stability than those using bare c-PVP. This conclusion is supported by a quantitative study of the threshold voltage shift with time under continuous operation. Long exposure to the ambient atmosphere causes an increase in the threshold voltage strongly dependent on the used semiconducting ink formulation.

Original languageEnglish (US)
Article number11536
Pages (from-to)1192-1195
Number of pages4
JournalMicroelectronics Reliability
Volume55
Issue number8
DOIs
StatePublished - Jul 1 2015

Keywords

  • Ageing
  • All-inkjet printed devices
  • Operational stability
  • Organic electronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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