Aligned Er-doped ZnO nanorod arrays with enhanced 1.54 μm infrared emission

W. C. Yang, C. W. Wang, J. C. Wang, Y. C. Chang, H. C. Hsu, Tzer En Nee, L. J. Chen, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Vertically aligned Er-doped ZnO nanorod arrays with sharp and intense 1.54 μm infrared emission have been fabricated on Si substrates through a well controlled spin-coating and annealing process. The synthesis method is advantageous for synthesizing ZnO nanostructures free from structural defects, capability for large-scale production, minimum equipment requirement and product homogeneity. Er atoms were found to incorporate into ZnO lattice from XRD, ESCA, TEM, STEM/EDS and PL measurements. The single-crystal Er-doped nanorods maintained their high microstructural quality after annealing for 4 hr at 800°C. The intensity of 1.54 μm infrared emission was found to be correlated with the deep level green emission. The enhanced luminescence intensity and best ever narrow wavelength distribution of Er-doped ZnO nanorod arrays at 1.54 μm emission will be conductive to applications in optoelectronic devices and optical communications.

Original languageEnglish (US)
Pages (from-to)3363-3368
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume8
Issue number7
DOIs
StatePublished - Jul 1 2008

Keywords

  • Er-doped ZnO
  • Infrared emission
  • Nanorod arrays

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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