AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

Jianchang Yan, Junxi Wang, Yun Zhang, Peipei Cong, Lili Sun, Yingdong Tian, Chao Zhao, Jinmin Li

    Research output: Contribution to journalArticlepeer-review

    75 Scopus citations

    Abstract

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.
    Original languageEnglish (US)
    Pages (from-to)254-257
    Number of pages4
    JournalJournal of Crystal Growth
    Volume414
    DOIs
    StatePublished - Mar 2015

    ASJC Scopus subject areas

    • Materials Chemistry
    • Inorganic Chemistry
    • Condensed Matter Physics

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