Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm2v-1 s-1

Jeremy Smith, Aneeqa Bashir, George Adamopoulos, John E. Anthony, Donal D.C. Bradley, R. Hamilton, Martin Heeney, Iain McCulloch, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

Figure Presented An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.

Original languageEnglish (US)
Pages (from-to)3598-3602
Number of pages5
JournalAdvanced Materials
Volume22
Issue number32
DOIs
StatePublished - Aug 24 2010
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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