Air-stable ambipolar organic transistors

Thomas D. Anthopoulos*, G. C. Anyfantis, G. C. Papavassiliou, Dago M. De Leeuw

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

168 Scopus citations

Abstract

The authors report on ambipolar organic transistors based on the soluble dithiolene derivative (diphenylethylenedithiolato)(1,3-dithiol-2-thione-4,5- dithiolato)nickel [Ni(dpedt)(dmit)]. Due to its small band gap, efficient injection of holes and electrons from gold source/drain electrodes is possible. Both carrier mobilities are estimated to be approximately equal with maximum value on the order of 10-4 cm2 V s. The transistors exhibit excellent ambient stability with a shelve lifetime exceeding 3 months. The pronounced stability of Ni(dpedt)(dmit) as well as of several other molecules studied here is correlated to their redox potential. The present findings can be used as a general guide towards design and synthesis of air-stable ambipolar/ n -channel molecules.

Original languageEnglish (US)
Article number122105
JournalApplied Physics Letters
Volume90
Issue number12
DOIs
StatePublished - Mar 30 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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