Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond

P. Sivasubramani*, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, K. Freeman, Muhammad Mustafa Hussain, R. Harris, S. C. Song, D. Heh, R. Choi, Cp Majhi, G. Bersuker, P. Lysaght, B. H. Lee, H. H. Tseng, I. J.S. Jur, D. J. LichtenwalnerA. I. Kingon, R. Jammy

*Corresponding author for this work

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