Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

Pawan Mishra, Bilal Janjua, Tien Khee Ng, Chao Shen, Abdelmajid Salhi, Ahmed Alyamani, Munir El-Desouki, Boon S. Ooi

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We investigated the design and growth of compositionally-graded InGaN multiple quantum wells (MQW) based light-emitting diode (LED) without an electron-blocking layer (EBL). Numerical investigation showed uniform carrier distribution in the active region, and higher radiative recombination rate for the optimized graded-MQW design, i.e. In0→xGa1→(1-x)N / InxGa(1-x)N / Inx→0Ga(1-x)→1N, as compared to the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles were numerically investigated for comparison. The stepped- and graded-MQW-LED were then grown using plasma assisted molecular beam epitaxy (PAMBE) through surface-stoichiometry optimization based on reflection high-energy electron-diffraction (RHEED) in-situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 A/cm2 and 275 A/cm2, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, consistent with the numerical simulation.
Original languageEnglish (US)
Pages (from-to)1-9
Number of pages9
JournalIEEE Photonics Journal
Volume7
Issue number3
DOIs
StatePublished - May 6 2015

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