Accelerated life-time testing and resistance degradation of thin-film decoupling capacitors

Husam Al-Shareef*, Duane Dimos

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

Resistance degradation in PZT thin-film capacitors has been studied as a function of applied voltage, temperature, and film composition. It is found that the mean-time-to-failure (life-time or tf) of the capacitors shows a power law dependence on applied voltage of the form tf∝V-n (n to approximately 4-5). The capacitor life-time also (tf) exhibits a temperature dependence of the form tf∝exp(Ea/kT), with an activation energy of approximately 0.8 eV. The steady-state leakage current in these samples appears to be bulk controlled. The voltage, temperature, and polarity dependence of the leakage current collectively suggest a leakage current mechanism most similar to a Frenkel-Poole process. The Nb-doped PZT films exhibit superior life-time and leakage current to the undoped PZT films. This result can be explained based on the point-defect chemistry of the PZT system. Finally, the results indicate that the Nb-doped PZT films meet the essential requirements for decoupling capacitor applications.

Original languageEnglish (US)
Title of host publicationIEEE International Symposium on Applications of Ferroelectrics
EditorsB.M. Kulwicki, A. Amin, A. Safari
PublisherIEEE
Pages421-425
Number of pages5
Volume1
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period08/18/9608/21/96

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Accelerated life-time testing and resistance degradation of thin-film decoupling capacitors'. Together they form a unique fingerprint.

Cite this