A ZnO/InN/GaN heterojunction photodetector with extended infrared response

Lung Hsing Hsu, Shun Chieh Hsu, Hsin Ying Lee, Yu Lin Tsai, Da Wei Lin, Hao Chung Kuo, Yi Chia Hwang, Yin Han Chen, Jr-Hau He, Yuh Jen Cheng, Shih Yen Lin, Chien Chung Lin*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO-SI 2015
PublisherOptical Society of America (OSA)
Number of pages1
ISBN (Electronic)9781557529688
DOIs
StatePublished - May 4 2015
EventCLEO: Science and Innovations, CLEO-SI 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameCLEO: Science and Innovations, CLEO-SI 2015

Other

OtherCLEO: Science and Innovations, CLEO-SI 2015
CountryUnited States
CitySan Jose
Period05/10/1505/15/15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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