A ZnO/InN/GaN heterojunction photodetector with extended infrared response

Lung Hsing Hsu, Shun Chieh Hsu, Hsin Ying Lee, Yu Lin Tsai, Da Wei Lin, Hao Chung Kuo, Yi Chia Hwang, Yin Han Chen, Jr-Hau He, Yuh Jen Cheng, Shih Yen Lin, Chien Chung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

Original languageEnglish (US)
Title of host publication2015 Conference on Lasers and Electro-Optics, CLEO 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781557529688
StatePublished - Aug 10 2015
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest
Volume2015-August

Other

OtherConference on Lasers and Electro-Optics, CLEO 2015
CountryUnited States
CitySan Jose
Period05/10/1505/15/15

Keywords

  • Gallium nitride
  • Heterojunctions
  • II-VI semiconductor materials
  • Lighting
  • Photodetectors
  • Photonics
  • Zinc oxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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