A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates

P. Majhi*, H. C. Wen, K. Choi, Husam Niman Alshareef, C. Huffman, B. H. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Systematic analysis of the influence of nitrogen on the work function of TaN, HfN, and HfTiN was performed. It was observed that the effective work function of these materials could be modulated by ∼300 meV by varying the nitrogen content in the film even after 1000°C anneal. Additionally, there is minimal observable influence of high nitrogen flow rates during the plasma deposition of metal nitrides on the integrity of the hafnium based high-k dielectrics.

Original languageEnglish (US)
Title of host publication2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers
Pages105-106
Number of pages2
DOIs
StatePublished - Oct 31 2005
Event2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH - Hsinchu, Taiwan, Province of China
Duration: Apr 25 2005Apr 27 2005

Publication series

Name2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Other

Other2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH
CountryTaiwan, Province of China
CityHsinchu
Period04/25/0504/27/05

ASJC Scopus subject areas

  • Engineering(all)

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