A study of the effects metal residues in poly(9,9-dioctylfluorene) have on field-effect transistor device characteristics

Prashant Sonar, Andrew C. Grimsdale, Martin Heeney, Maxim Shkunov, Iain Mcculloch, Klaus Müllen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The amount of metal residues from organometallic reagents used in preparation of poly(9,9-dioctylfluorene) by palladium catalysed Suzuki and nickel-induced Yamamoto polycondensations have been determined, and their effect upon the behaviour of the polymer in field-effect transistors (FETs) has been measured. The metal levels from material polymerised by Suzuki method were found to be much higher than from that made by the Yamamoto procedure. Simple treatment of the polymers with suitable metal trapping reagents lowered the metal levels significantly, with EDTA giving best results for nickel and triphenylphosphine for palladium. Comparison of the behaviour of FETs using polyfluorenes with varying levels of metal contamination, showed that the metal residues have little effect upon the mobility values, but often affect the degree of hysteresis, possibly acting as charge traps. Satisfactory device performances were obtained from polymer with palladium levels of 2000 μg/g suggesting that complete removal of metal residues may not be necessary for satisfactory device performance.

Original languageEnglish (US)
Pages (from-to)872-875
Number of pages4
JournalSynthetic Metals
Volume157
Issue number21
DOIs
StatePublished - Oct 1 2007

Keywords

  • Charge carrier mobility
  • Charge trapping
  • Conjugated polymer
  • Field-effect transistor
  • Organometallic coupling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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